Infineon IPD35N10S3L-26: High-Efficiency Power MOSFET for Advanced Automotive and Industrial Applications

The demand for higher efficiency, greater reliability, and superior thermal performance in power electronics continues to grow, especially in the automotive and industrial sectors. Addressing these needs, the Infineon IPD35N10S3L-26 stands out as a high-performance N-channel power MOSFET engineered to deliver exceptional power conversion efficiency and robustness in demanding applications.

Designed using Infineon’s advanced OptiMOS™ technology, this MOSFET offers an optimal balance between low on-state resistance (RDS(on)) and high switching performance. With a maximum RDS(on) of just 2.6 mΩ at 10 V, it significantly reduces conduction losses, making it ideal for high-current applications such as DC-DC converters, motor control systems, and solid-state relays. The low gate charge (Qg) further enhances switching efficiency, enabling higher frequency operation and contributing to more compact and lighter design solutions.

A key strength of the IPD35N10S3L-26 is its automotive-grade qualification, adhering to the stringent AEC-Q101 standard. This ensures exceptional reliability and performance under harsh operating conditions, including wide temperature fluctuations and high humidity—common in automotive environments. It is particularly suitable for use in electric power steering (EPS), brake systems, and other critical automotive electronics where failure is not an option.

In industrial contexts, this MOSFET excels in power supplies, robotics, and automation equipment. Its low thermal resistance and high current handling capability (up to 35 A) allow for efficient power management with minimal cooling requirements. The device is housed in a SuperSO8 package, which offers improved thermal dissipation and a smaller footprint compared to standard packages.

Moreover, the IPD35N10S3L-26 incorporates enhanced body diode robustness, reducing reverse recovery losses and improving system reliability in inductive load applications. This feature is especially valuable in motor drive circuits and synchronous rectification.

ICGOOFind:

The Infineon IPD35N10S3L-26 is a high-efficiency power MOSFET that combines low RDS(on), high switching speed, and automotive-grade robustness. It is an excellent choice for designers seeking to improve performance and reduce energy losses in advanced automotive and industrial power systems.

Keywords:

Power MOSFET, Automotive Grade, High Efficiency, Low RDS(on), OptiMOS Technology